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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1770 description high power dissipation high colle ctor-emitter breakdown voltage- : v (br)ceo = 150v(min.) complement to type 2sb1190 applications power amplifier applications. tv vertical deflecti on output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 6 v i c collector current-continuous 1 a i cm collector current-peak 2 a total power dissipation @ t c =25 25 p c total power dissipation @ t a =25 1.4 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1770 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 150 v v (br)ebo emitter-base breakdown voltage i e = 0.5ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 0.5a; i b = 50ma 1.0 v v be (on) base-emitter on voltage i c = 0.3a; v ce = 10v 1.0 v i cbo collector cutoff current v cb = 200v; i e = 0 50 a i ebo emitter cutoff current v eb = 4v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a; v ce = 10v 60 240 h fe-2 dc current gain i c = 0.3a; v ce = 10v 50 f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 20 mhz c ob output capacitance i e = 0; v cb = 10v; f test =1mhz 27 pf ? h fe- 1 classifications q p 60-140 100-240 isc website www.iscsemi.cn 2 |
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